Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2009
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hal-00596168 , version 1 (26-05-2011)

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  • HAL Id : hal-00596168 , version 1

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K.I. Na, S. Cristoloveanu, Y.H. Bae, P. Patruno, W. Xiong, et al.. Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs. Solid-State Electronics, 2009, 53 (2), pp.150-153. ⟨hal-00596168⟩
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