Journal Articles
Solid-State Electronics
Year : 2009
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https://hal.science/hal-00596168
Submitted on : Thursday, May 26, 2011-4:16:44 PM
Last modification on : Tuesday, February 7, 2023-2:44:46 PM
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- HAL Id : hal-00596168 , version 1
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K.I. Na, S. Cristoloveanu, Y.H. Bae, P. Patruno, W. Xiong, et al.. Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs. Solid-State Electronics, 2009, 53 (2), pp.150-153. ⟨hal-00596168⟩
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