In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs - Archive ouverte HAL Access content directly
Journal Articles IEEE Electron Device Letters Year : 2009

In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs

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Abstract

Detailed measurements of front- and back-channel characteristics in advanced SOI MOSFETs (ultrathin Si film, high-kappa, metal gate, and selective epitaxy of source/drain) are used to reveal and compare the transport properties at the corresponding Si/high- kappa (HfO2 or HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage, and subthreshold swing. As compared with Si/SiO2, the low-field mobility is lower at the Si/high-kappa interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-kappa and neutral defects.
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Dates and versions

hal-00596074 , version 1 (26-05-2011)

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L. Pham-Nguyen, C. Fenouillet-Beranger, A. Vandooren, T. Skotnicki, G. Ghibaudo, et al.. In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs. IEEE Electron Device Letters, 2009, 30 (10), pp.1075-1077. ⟨10.1109/LED.2009.2027141⟩. ⟨hal-00596074⟩
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