Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2007

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

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hal-00393713 , version 1 (09-06-2009)

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  • HAL Id : hal-00393713 , version 1

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W. Chaisantikulwat, M. Mouis, G. Ghibaudo, S. Cristoloveanu, J. Widiez, et al.. Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique. Solid-State Electronics, 2007, 51 (11-12), pp.1494-1499. ⟨hal-00393713⟩
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