Journal Articles
Solid-State Electronics
Year : 2007
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https://hal.science/hal-00393713
Submitted on : Tuesday, June 9, 2009-4:29:03 PM
Last modification on : Tuesday, October 19, 2021-10:59:14 AM
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- HAL Id : hal-00393713 , version 1
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W. Chaisantikulwat, M. Mouis, G. Ghibaudo, S. Cristoloveanu, J. Widiez, et al.. Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique. Solid-State Electronics, 2007, 51 (11-12), pp.1494-1499. ⟨hal-00393713⟩
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