Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques. - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2008

Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques.

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T.V. Chandrasekhar Rao
  • Function : Author
J. Antoszewski
  • Function : Author
L. Faraone
  • Function : Author
T. Nguyen
  • Function : Author
P. Gentil
  • Function : Author
N. Bresson
  • Function : Author
F. Allibert
  • Function : Author
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Dates and versions

hal-00391612 , version 1 (04-06-2009)

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  • HAL Id : hal-00391612 , version 1

Cite

T.V. Chandrasekhar Rao, J. Antoszewski, L. Faraone, S. Cristoloveanu, T. Nguyen, et al.. Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques.. Journal of Applied Physics, 2008, 103 (XX, 034503), pp.1-5. ⟨hal-00391612⟩
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