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Article Dans Une Revue Journal de Physique IV Proceedings Année : 1995

Chemical Vapour Deposition of AIN-Si3N4 Codeposits

F. Henry
  • Fonction : Auteur
B. Armas
  • Fonction : Auteur
C. Combescure
D. Thenegal
  • Fonction : Auteur
R. Flamand
  • Fonction : Auteur

Résumé

A hot wall CVD reactor has been especially adapted to the problem of producing codeposits of aluminium and silicon nitrides. The experimental set-up for preparing "in situ" aluminium trichloride or a mixture of AlCl3 and SiCl4 by the action of silicon tetrachloride on an aluminium supply, heated to temperatures (Tc) between 380 and 520 °C is presented. A study was also made of the deposition kinetics using a thermobalance with a continuous recording facility. The deposition kinetics of AIN and Si3N4 were measured and compared. The codeposits prepared at a temperature of 1200 °C and a total pressure of 1 Torr were found to be adherent when deposited on a graphite substrate covered by a layer of silicon carbide obtained by pyrolysis of tetramethylsilane at 1240 °C. The deposits were characterized by a variety of methods : X-ray diffraction, wavelength dispersive spectroscopy and scanning electron microscopy.

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jpa-00253955 , version 1 (04-02-2008)

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F. Henry, B. Armas, C. Combescure, D. Thenegal, R. Flamand. Chemical Vapour Deposition of AIN-Si3N4 Codeposits. Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-785-C5-792. ⟨10.1051/jphyscol:1995593⟩. ⟨jpa-00253955⟩

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