Numerical and Analytical Investigations on IGBTs Thermal Behaviour - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal de Physique III Année : 1997

Numerical and Analytical Investigations on IGBTs Thermal Behaviour

F. Calmon
J.-P. Chante
  • Fonction : Auteur
A. Sénès
  • Fonction : Auteur
B. Reymond
  • Fonction : Auteur

Résumé

Power devices such as IGBTs (Insulated Gate Bipolar Transistors) operate within a large temperature range. Therefore, it is really important to understand the relationship between the device temperature and its electrical characteristics. From this viewpoint, the authors have studied the influence of the IGBT technology (Punch-Through PT or Non-Punch-Through NPT) on its thermal and electrical behaviours. This work points out that the variations with temperature of the stored charge in the IGBT base depend on the device technology. Using two-dimensional device simulations coupled with an analytical modelling, the authors show that the stored charge in PT devices is more temperature sensitive than in NPT devices. The modelling of the stored charge function of the current density and the device description proves that the concept of the charge injection control influences the temperature dependence. Consequently the static and dynamic IGBT characteristics are temperature sensitive. The voltage rise in hard switching mode (turn-off phase) is related to the temperature dependence of the stored charge.

Domaines

Articles anciens
Fichier principal
Vignette du fichier
ajp-jp3v7p689.pdf (755.18 Ko) Télécharger le fichier
Origine : Accord explicite pour ce dépôt

Dates et versions

jpa-00249607 , version 1 (04-02-2008)

Identifiants

Citer

F. Calmon, J.-P. Chante, A. Sénès, B. Reymond. Numerical and Analytical Investigations on IGBTs Thermal Behaviour. Journal de Physique III, 1997, 7 (3), pp.689-705. ⟨10.1051/jp3:1997149⟩. ⟨jpa-00249607⟩

Collections

AJP
76 Consultations
107 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More