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Article Dans Une Revue Journal de Physique III Année : 1995

Chemical Vapor Deposition of Thick Tungsten Coatings: Mass Transport Modelling and Experiments

M. Pons
A. Benezech
  • Fonction : Auteur
P. Huguet
R. Gaufres
  • Fonction : Auteur
Ph. Diez
  • Fonction : Auteur
D. Lafforet
  • Fonction : Auteur

Résumé

Thick tungsten coatings have been produced by chemical vapor deposition (CVD) from H2-WF6 at a temperature in the range 773-1073 K under a reduced pressure. The experimental set-up was designed for in situ Raman analysis of the gas phase (temperature and WF6 concentration) during the growth of tungsten coatings. A two dimensional mass transport model was proposed. It assumes a simple chemical pathway. Only the H2 reduction of WF6 on the substrate was taken into account. The major objective of the present paper is to report on (i) the experimental deposition rates and the rate values calculated by the model, (ii) the values of temperature and gas phase composition deduced from Raman spectroscopy measurements and the values of these quantities obtained by numerical calculations. Within the range of process parameters investigated, the predictive capabilities of the numerical modelling are demonstrated; in addition the temperature and WF6 partial pressure measurements can be recorded by a Raman equipment during the deposition process.

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Dates et versions

jpa-00249370 , version 1 (04-02-2008)

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M. Pons, A. Benezech, P. Huguet, R. Gaufres, Ph. Diez, et al.. Chemical Vapor Deposition of Thick Tungsten Coatings: Mass Transport Modelling and Experiments. Journal de Physique III, 1995, 5 (8), pp.1145-1160. ⟨10.1051/jp3:1995182⟩. ⟨jpa-00249370⟩

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