Méthodologie d'approche pour la conception des transistors VDMOS de puissance
Résumé
In this paper, a design method for Power MOSFET devices, based on the physical phenomena and electrical properties of the structure, is presented. This method is implemented in a software called Power MOSFET's Designer, which only needs three inputs : the layout (cells, design rules, chip area), the breakdown voltage and the technological family characteristics, to define the SPICE equivalent circuit of the transistor. It is well suited to the simulation of power electronics circuits. Application examples are given.
Domaines
Articles anciens
Origine : Accord explicite pour ce dépôt