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Article Dans Une Revue Journal de Physique Colloques Année : 1985

ON THE ATOMIC STRUCTURE OF LIQUID GaAs

Claire Bergman
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C. Bichara
P. Chieux
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J. Gaspard
  • Fonction : Auteur

Résumé

Like Si and Ge, the properties of GaAs change drastically upon melting : the molten phase shows a metallic conduction and its density is larger than in semiconducting crystalline phase. In addition, the entropy of melting is anomalously large. The liquid phase properties of GaAs can be explained by its structure. We have measured the total structure factor of liquid GaAs just above its melting temperature (T = 1250 °C) by neutron diffraction on the D4B diffractometer at the ILL (Grenoble). The structure factor and pair correlation function are similar to those of Si and Ge. However the coordination number is 5.5 ± 0.5, lower than the corresponding value (6.4) for Si and Ge. Different structural models are discussed.

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jpa-00225152 , version 1 (04-02-2008)

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Claire Bergman, C. Bichara, P. Chieux, J. Gaspard. ON THE ATOMIC STRUCTURE OF LIQUID GaAs. Journal de Physique Colloques, 1985, 46 (C8), pp.C8-97-C8-100. ⟨10.1051/jphyscol:1985811⟩. ⟨jpa-00225152⟩

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