Modeling and analysis of integrated SiRC snubber circuit in SiC power modules
Résumé
Wide bandgap (WBG) power semiconductors such as SiC and GaN devices allow for very fast switching speed, thus improving the overall efficiency and power density of power converters. Among the factors now limiting the switching speed, there is the parasitic inductance of the switching cell induced by power interconnections at packaging level, especially leadframe along with DBC layout and bonding wires. While important, optimizing power connexions reach some limits as long as the switching cell is closed with an external decoupling capacitor. A complementary approach is to integrate a RC snubber circuit directly inside the power module (PM) to shorten at most the switching cell inductive loop. This paper investigates the opportunity to integrate silicon monolithic RC snubber dies (SiRC), fully compatible with existing power modules assembly processes and operation. In this paper, several PM integrating different numbers of SiRC snubber are assembled and tested to assess the advantages on voltage overshoot and oscillations damping. A 3D modelling of the power module's inductive loop is also done to give comprehensive explanations of the remaining voltages overshoots and oscillations, and comment on the added value of such snubbers depending on the RC values.
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