Study of Ga2O3 thin films homoepitaxially grown on (010), (-201), and (001) substrates
Étude des films minces Ga2O3 homoépitaxiés sur substrats (010), (-201) et (001)
Résumé
The commercial availability of β-Ga2O3 substrates (up to 4 inches for (001) orientation) makes this wide bandgap semiconductor very attractive for power electronics. In this work, β-Ga2O3 epilayers were grown on (010), (-201), and (001) oriented Ga2O3 substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). Before growth, the morphology of the substrate surface was first investigated by optical microscopy and AFM to assess the quality of the preparation by the supplier (Novel Crystal Technology, Japan). Then, we studied the deposition rate, morphology, and the structural properties of the Ga2O3 layers as a function of several MOCVD parameters : carrier gas (N2, Ar or He), temperature, O/Ga ratio… Optical and scanning electron microscopy images, as well as XRD characterisations are given. The results show smooth surfaces on (001) and (010) orientations, but pyramidal/faceted defects on (-201). Interestingly, XRD spectra show a (-401) diffraction peak for all layers grown on (001) substrates, corresponding to a rotation of 73,4° around [010] axis of, at least, a fraction of the grown material.
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