<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-05410487</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-15T09:55:46+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">Study of Ga2O3 thin films homoepitaxially grown on (010), (-201), and (001) substrates</title>
            <title xml:lang="fr">Étude des films minces Ga2O3 homoépitaxiés sur substrats (010), (-201) et (001)</title>
            <author role="crp">
              <persName>
                <forename type="first">Vincent</forename>
                <surname>Sallet</surname>
              </persName>
              <email type="md5">3f33b4e53c22e89cec9079bd595a5164</email>
              <email type="domain">uvsq.fr</email>
              <idno type="idhal" notation="string">vincent-sallet</idno>
              <idno type="idhal" notation="numeric">179635</idno>
              <idno type="halauthorid" notation="string">28050-179635</idno>
              <idno type="ORCID">https://orcid.org/0000-0003-0949-8397</idno>
              <idno type="IDREF">https://www.idref.fr/180745913</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Gaelle</forename>
                <surname>Amiri</surname>
              </persName>
              <idno type="idhal" notation="numeric">1500452</idno>
              <idno type="halauthorid" notation="string">1387177-1500452</idno>
              <idno type="ORCID">https://orcid.org/0009-0005-2967-3633</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Saïd</forename>
                <surname>Hassani</surname>
              </persName>
              <idno type="halauthorid">3634340-0</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Corinne</forename>
                <surname>Sartel</surname>
              </persName>
              <idno type="halauthorid">1029852-0</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Zeyu</forename>
                <surname>Chi</surname>
              </persName>
              <idno type="idhal" notation="numeric">1229232</idno>
              <idno type="halauthorid" notation="string">2306000-1229232</idno>
              <idno type="ORCID">https://orcid.org/0000-0003-1391-527X</idno>
              <idno type="IDREF">https://www.idref.fr/272926523</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Jean-Michel</forename>
                <surname>Chauveau</surname>
              </persName>
              <email type="md5">f09a669c2690d309166c8898c9afc2d4</email>
              <email type="domain">uvsq.fr</email>
              <idno type="idhal" notation="string">jean-michel-chauveau</idno>
              <idno type="idhal" notation="numeric">1332473</idno>
              <idno type="halauthorid" notation="string">665507-1332473</idno>
              <idno type="ORCID">https://orcid.org/0000-0002-6860-7744</idno>
              <idno type="IDREF">https://www.idref.fr/060646012</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Ekaterina</forename>
                <surname>Chikoidze</surname>
              </persName>
              <idno type="halauthorid">1010490-0</idno>
              <affiliation ref="#struct-14136"/>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Vincent</forename>
                <surname>Sallet</surname>
              </persName>
              <email type="md5">3f33b4e53c22e89cec9079bd595a5164</email>
              <email type="domain">uvsq.fr</email>
            </editor>
            <funder ref="#projeurop-2791679"/>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2025-12-11 07:51:45</date>
              <date type="whenModified">2025-12-13 03:09:19</date>
              <date type="whenReleased">2025-12-11 14:20:04</date>
              <date type="whenProduced">2025-11-03</date>
              <date type="whenEndEmbargoed">2025-12-11</date>
              <ref type="file" target="https://hal.science/hal-05410487v1/document">
                <date notBefore="2025-12-11"/>
              </ref>
              <ref type="file" subtype="author" n="1" target="https://hal.science/hal-05410487v1/file/Poster_sallet%20V2.pdf" id="file-5410487-4631401">
                <date notBefore="2025-12-11"/>
              </ref>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="356034">
                <persName>
                  <forename>Vincent</forename>
                  <surname>Sallet</surname>
                </persName>
                <email type="md5">3f33b4e53c22e89cec9079bd595a5164</email>
                <email type="domain">uvsq.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-05410487</idno>
            <idno type="halUri">https://hal.science/hal-05410487</idno>
            <idno type="halBibtex">sallet:hal-05410487</idno>
            <idno type="halRefHtml">&lt;i&gt;Conférence du GDR MATEPI 2025&lt;/i&gt;, Nov 2025, Lille, France</idno>
            <idno type="halRef">Conférence du GDR MATEPI 2025, Nov 2025, Lille, France</idno>
            <availability status="restricted">
              <licence target="https://about.hal.science/hal-authorisation-v1/">HAL Authorization<ref corresp="#file-5410487-4631401"/></licence>
            </availability>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="OPENAIRE">OpenAIRE</idno>
            <idno type="stamp" n="UVSQ">Université de Versailles Saint-Quentin-en-Yvelines</idno>
            <idno type="stamp" n="GEMAC">Groupe d'Etude de la Matière Condensée</idno>
            <idno type="stamp" n="UNIV-PARIS-SACLAY">Université Paris-Saclay</idno>
            <idno type="stamp" n="UVSQ-UPSACLAY" corresp="UNIV-PARIS-SACLAY">UVSQ-UPSACLAY</idno>
            <idno type="stamp" n="GS-PHYSIQUE">Graduate School Physique</idno>
            <idno type="stamp" n="INSTITUT-SCIENCES-LUMIERE">Institut des Sciences de la Lumière</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="2">International</note>
            <note type="invited" n="0">No</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
            <note type="proceedings" n="0">No</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">Study of Ga2O3 thin films homoepitaxially grown on (010), (-201), and (001) substrates</title>
                <title xml:lang="fr">Étude des films minces Ga2O3 homoépitaxiés sur substrats (010), (-201) et (001)</title>
                <author role="crp">
                  <persName>
                    <forename type="first">Vincent</forename>
                    <surname>Sallet</surname>
                  </persName>
                  <email type="md5">3f33b4e53c22e89cec9079bd595a5164</email>
                  <email type="domain">uvsq.fr</email>
                  <idno type="idhal" notation="string">vincent-sallet</idno>
                  <idno type="idhal" notation="numeric">179635</idno>
                  <idno type="halauthorid" notation="string">28050-179635</idno>
                  <idno type="ORCID">https://orcid.org/0000-0003-0949-8397</idno>
                  <idno type="IDREF">https://www.idref.fr/180745913</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Gaelle</forename>
                    <surname>Amiri</surname>
                  </persName>
                  <idno type="idhal" notation="numeric">1500452</idno>
                  <idno type="halauthorid" notation="string">1387177-1500452</idno>
                  <idno type="ORCID">https://orcid.org/0009-0005-2967-3633</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Saïd</forename>
                    <surname>Hassani</surname>
                  </persName>
                  <idno type="halauthorid">3634340-0</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Corinne</forename>
                    <surname>Sartel</surname>
                  </persName>
                  <idno type="halauthorid">1029852-0</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Zeyu</forename>
                    <surname>Chi</surname>
                  </persName>
                  <idno type="idhal" notation="numeric">1229232</idno>
                  <idno type="halauthorid" notation="string">2306000-1229232</idno>
                  <idno type="ORCID">https://orcid.org/0000-0003-1391-527X</idno>
                  <idno type="IDREF">https://www.idref.fr/272926523</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Jean-Michel</forename>
                    <surname>Chauveau</surname>
                  </persName>
                  <email type="md5">f09a669c2690d309166c8898c9afc2d4</email>
                  <email type="domain">uvsq.fr</email>
                  <idno type="idhal" notation="string">jean-michel-chauveau</idno>
                  <idno type="idhal" notation="numeric">1332473</idno>
                  <idno type="halauthorid" notation="string">665507-1332473</idno>
                  <idno type="ORCID">https://orcid.org/0000-0002-6860-7744</idno>
                  <idno type="IDREF">https://www.idref.fr/060646012</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Ekaterina</forename>
                    <surname>Chikoidze</surname>
                  </persName>
                  <idno type="halauthorid">1010490-0</idno>
                  <affiliation ref="#struct-14136"/>
                </author>
              </analytic>
              <monogr>
                <meeting>
                  <title>Conférence du GDR MATEPI 2025</title>
                  <date type="start">2025-11-03</date>
                  <date type="end">2025-11-06</date>
                  <settlement>Lille</settlement>
                  <country key="FR">France</country>
                </meeting>
                <respStmt>
                  <resp>conferenceOrganizer</resp>
                  <name>GDR MATEPI</name>
                </respStmt>
                <imprint/>
              </monogr>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <keywords scheme="author">
                <term xml:lang="en">homoepitaxy</term>
                <term xml:lang="en">structural characterisation</term>
                <term xml:lang="en">thin films</term>
                <term xml:lang="en">MOCVD</term>
                <term xml:lang="en">Ga2O3</term>
              </keywords>
              <classCode scheme="halDomain" n="phys.cond">Physics [physics]/Condensed Matter [cond-mat]</classCode>
              <classCode scheme="halTypology" n="POSTER">Poster communications</classCode>
              <classCode scheme="halOldTypology" n="POSTER">Poster communications</classCode>
              <classCode scheme="halTreeTypology" n="POSTER">Poster communications</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>The commercial availability of β-Ga2O3 substrates (up to 4 inches for (001) orientation) makes this wide bandgap semiconductor very attractive for power electronics. In this work, β-Ga2O3 epilayers were grown on (010), (-201), and (001) oriented Ga2O3 substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). Before growth, the morphology of the substrate surface was first investigated by optical microscopy and AFM to assess the quality of the preparation by the supplier (Novel Crystal Technology, Japan). Then, we studied the deposition rate, morphology, and the structural properties of the Ga2O3 layers as a function of several MOCVD parameters : carrier gas (N2, Ar or He), temperature, O/Ga ratio…Optical and scanning electron microscopy images, as well as XRD characterisations are given. The results show smooth surfaces on (001) and (010) orientations, but pyramidal/faceted defects on (-201). Interestingly, XRD spectra show a (-401) diffraction peak for all layers grown on (001) substrates, corresponding to a rotation of 73,4° around [010] axis of, at least, a fraction of the grown material.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="laboratory" xml:id="struct-14136" status="VALID">
          <idno type="IdRef">183854837</idno>
          <idno type="ISNI">0000 0004 0452 3570 </idno>
          <idno type="RNSR">199812960A</idno>
          <idno type="ROR">https://ror.org/01wrng808</idno>
          <orgName>Groupe d'Etude de la Matière Condensée</orgName>
          <orgName type="acronym">GEMAC</orgName>
          <date type="start">1998-01-01</date>
          <desc>
            <address>
              <addrLine>URF de Sciences Bâtiment Fermat 45 avenue des Etats Unis78035 Versailles</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.gemac.uvsq.fr/</ref>
          </desc>
          <listRelation>
            <relation name="UMR8635" active="#struct-81173" type="direct"/>
            <relation name="UMR8635" active="#struct-441569" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-81173" status="VALID">
          <idno type="IdRef">03082057X</idno>
          <idno type="ISNI">0000 0001 2323 0229 </idno>
          <idno type="ROR">https://ror.org/03mkjjy25</idno>
          <orgName>Université de Versailles Saint-Quentin-en-Yvelines</orgName>
          <orgName type="acronym">UVSQ</orgName>
          <date type="start">1991-07-22</date>
          <desc>
            <address>
              <addrLine>55 avenue de Paris - 78035 Versailles cedex</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.uvsq.fr/</ref>
          </desc>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
      </listOrg>
      <listOrg type="projects">
        <org type="europeanProject" xml:id="projeurop-2791679" status="VALID">
          <idno type="number">101172940</idno>
          <idno type="program">HORIZON-CL5-2024-D3-01</idno>
          <idno type="call">HORIZON-CL5-2024-D3-01</idno>
          <orgName>SAFEPOWER</orgName>
          <desc>Safer and More Reliable WBG/UWBG-Based MVDC Power Converters</desc>
          <date type="start">2024-10-01</date>
          <date type="end">2028-09-30</date>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>