Article Dans Une Revue Microelectronics Reliability Année : 2025

Source-connected and gate-connected field-plate influence on thermal resistance of AlGaN/GaN HEMT with varying passivation thickness and field-plate length

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hal-05364789 , version 1 (14-11-2025)

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Vaidehi Vijay Painter, Raphaël Sommet, Jean-Christophe Nallatamby, P. Vigneshwara Raja. Source-connected and gate-connected field-plate influence on thermal resistance of AlGaN/GaN HEMT with varying passivation thickness and field-plate length. Microelectronics Reliability, 2025, 175, pp.115947. ⟨10.1016/j.microrel.2025.115947⟩. ⟨hal-05364789⟩
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