Back Barrier Integration for > 4kV Blocking in GaN HEMTs on Sapphire without Field Plates
Résumé
This work presents a significant advancement in optimizing the trade-off between on-resistance and breakdown voltage in GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. By integrating an AlGaN back barrier and employing high carbon doping in the buffer layer, we achieve blocking voltages exceeding 4 kV while maintaining low on-resistance-without the use of gate dielectrics or field plates. In addition to improved electrical performance, transient measurements reveal a reduction in trapping effects thanks to the back barrier, which enhances carrier confinement and mitigates long recovery time traps. These findings highlight the potential of GaN-on-sapphire as a cost-effective and scalable platform for high-voltage power applications.
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