Poster De Conférence Année : 2025

Characterization of β-Ga2O3 and device fabrication

Résumé

Monoclinic β-Ga2O3 is an ultra-wide bandgap (UWBG) semiconductor (Eg ~ 4,5 eV) with great physical properties, including a high breakdown field (up to 8 MV/cm) [1], a short absorption edge, and excellent chemical/thermal stability. These characteristics, as well as the recent progress in single-crystal substrate growth of this material, have raised interest in gallium oxide for high-voltage and low-loss power electronics, as a complement or potential alternative to wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN).

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hal-05099267 , version 1 (11-07-2025)

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  • HAL Id : hal-05099267 , version 1

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Enora Vuillermet, Changzi Lu, Camille Sonneville, Pierre Brosselard, Jean-Marie Bluet, et al.. Characterization of β-Ga2O3 and device fabrication. Société Française de Physique, Jun 2025, Troyes, France. ⟨hal-05099267⟩
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