Peripheral defects related to processing technique in GaN-on-GaN vertical devices
Résumé
In recent years, there has been a notable interest in GaN devices for power applications, particularly in the context of vertical structures such as GaN/GaN. This growing interest stems from the recognition of GaN's potential to surpass traditional semiconductor technologies like Si, SiC, and even GaN/Si. Despite the promising advancements in GaN technology, the performance of these devices can be significantly affected by the presence of defects within the material [1]. Defects, such as dislocations, vacancies, impurities (etc…) can have a huge impact on the device’s reliability and efficiency [2][3]. Therefore, understanding and analyzing these defects is crucial for optimizing GaN device performance. Toward this end, DLTS (Deep Level Transient Spectroscopy) and micro-raman spectroscopy measurements were realized on GaN-on-GaN vertical Schottky diodes [4].
Domaines
Energie électrique| Origine | Fichiers produits par l'(les) auteur(s) |
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