Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC - Archive ouverte HAL
Communication Dans Un Congrès Année : 2024

Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC

Huber C.
  • Fonction : Auteur
F Medjdoub

Résumé

We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche capability (a property of Si and SiC devices) is demonstrated also for vertical devices on silicon substrate, enabling reliable high-voltage operation; (ii) threshold voltage instabilities are related to the presence of interface and border traps, whose contribution can be modeled with great accuracy by prior characterization of the trap distribution profile; (iii) gate stack reliability is mainly limited by oxide breakdown; factors limiting off-state failure are discussed. Strategies for device improvement are proposed, also based on the learnings from silicon and silicon carbide technology.
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Année Mois Jours
Avant la publication
mardi 31 décembre 2024
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mardi 31 décembre 2024
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Dates et versions

hal-04762052 , version 1 (31-10-2024)

Identifiants

  • HAL Id : hal-04762052 , version 1

Citer

Meneghini M., Fregolent M., Zagni N., Hamadoui Y., Marcuzzi A., et al.. Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC. IEDM 2023 - 70th Annual IEEE International Electron Devices Meeting, Dec 2024, San Francisco, United States. ⟨hal-04762052⟩
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