Article Dans Une Revue Physical Review B Année : 2024

Genuine and faux single G centers in carbon-implanted silicon

Alrik Durand
Yoann Baron
Félix Cache
Vincent Jacques
Anaïs Dréau

Résumé

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around 1.28 μm and identified to a common carbon complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 1960s. The remaining defects belong to another color center, which we will refer to as the G* center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G* center quantum properties.

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hal-04699426 , version 1 (16-09-2024)

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Alrik Durand, Yoann Baron, Félix Cache, Tobias Herzig, Mario Khoury, et al.. Genuine and faux single G centers in carbon-implanted silicon. Physical Review B, 2024, 110, pp.L020102. ⟨10.1103/PhysRevB.110.L020102⟩. ⟨hal-04699426⟩
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