Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization
Résumé
This work focuses on a novel methodology to establish on-wafer calibration standards for the 16-Term Error Calibration Technique. It combines TRL-calibrated data with EM simulation to precisely generate S-parameters of standards. Applied to the advanced BiCMOS 55nm technology, with a layout maintaining consistent coupling between standards, the 16 error-terms calibration results in significant improvements from 40 GHz onward compared to standard calibration (SOLT or TRL) techniques. Notably, it corrects probe couplings, eliminates discontinuities between frequency bands, and ensures the accuracy of S-parameter measurements. Unlike traditional SOLT and TRL methods, this new approach attributes measured quantities solely to intrinsic transistor behavior.
Mots clés
Couplings
Accuracy
Atmospheric measurements
Particle measurements
Calibration
Scattering parameters
Frequency measurement
RF probes
on-wafer measurement
S-parameters
mmW
fMAX determination
SiGe HBT
RF inductors
RF MOSFET
TRL calibration
SOLT calibration
16 error-terms calibration
RF probes on-wafer measurement S-parameters mmW fMAX determination SiGe HBT RF inductors RF MOSFET TRL calibration SOLT calibration 16 error-terms calibration
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