Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2022

Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

P. Vigneshwara Raja
Mohamed Bouslama
Raphaël Sommet

Résumé

We derived a simplified analytical expression to estimate the dynamic reduction in the 2DEG density due to the buffer trapping (nT) in GaN-based high-electronmobility transistors (HEMTs). To compute nT, gate-lag drain current transient (DCT) measurements are carried out at a fixed temperature for different VnGS points. The dynamic decrease in the 2DEG due to the Fe-related trap at Ec-0.5 eV is found to be ∼3.4 × 10$^{11}$ cm$^{-2}$ in AlGaN/GaN HEMT; thus, nT is an essential quantity to evaluate the current collapse effects in HEMT. The validity of the expression is further demonstrated in the C-doped HEMTs. The calculated nT for the trap at Ec-0.14 eV is about 9 × 10$^{12}$ cm$^{-2}$ in InAlN/GaN HEMT with C-doped buffer, and the calculated nT for the trap at Ec-0.33 eV is ∼1.2 × 10$^{13}$ cm$^{-2}$ in AlN/GaN HEMT with C-doped buffer. These values reveal that current collapse effects are more pronounced in the C-doped HEMTs than the Fe-doped HEMTs. Thus, this work is an important first step before further improvements in the model for computing buffer trap concentration.

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hal-04682660 , version 1 (07-10-2024)

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P. Vigneshwara Raja, Emmanuel Dupouy, Mohamed Bouslama, Raphaël Sommet, Jean-Christophe Nallatamby. Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique. IEEE Transactions on Electron Devices, 2022, 69 (9), pp.4864-4869. ⟨10.1109/TED.2022.3193650⟩. ⟨hal-04682660⟩
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