Repetitive Short-circuits on 650 V GaN
Résumé
The study consists in analyzing the robustness of 650 V GaN HEMT components in case of shortcircuits. The objective is to develop a test bench for repetitive short-circuits to a component. Electrical characterizations will be carried out before and after the short-circuit cycles to identify the possible parameters drift of the tested devices, to identify the failure mechanisms. Parametric variations have been observed.
Domaines
Energie électriqueOrigine | Fichiers produits par l'(les) auteur(s) |
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