HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES - Archive ouverte HAL
Communication Dans Un Congrès Année : 2004

HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES

Résumé

High voltage bipolar diodes with a single periphery protection by JTE (Junction Termination Extension) have been realised and show breakdown voltages as high as 4.8 kV. Optical Beam Induced Current (OBIC) measurements have shown that the JTE are efficient. Thyristors with breakover voltage ~3.9 kV have been fabricated. In both case, the performance of the structures are limited by the dielectric rigidity of the ambient environment. Specific component have also been realised. i) current fault limiter have been able to block 800 V ; ii) SiCOI Schottky diodes and MESFET have been processed, which is a first step towards integrated power systems.

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Dates et versions

hal-04621819 , version 1 (24-06-2024)

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  • HAL Id : hal-04621819 , version 1

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Dominique Planson, Marie-Laure Locatelli, Mihai Lazar, Christophe Raynaud, Jean-Pierre Chante, et al.. HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France. ⟨hal-04621819⟩
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