HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES
Résumé
High voltage bipolar diodes with a single periphery protection by JTE (Junction Termination Extension) have been realised and show breakdown voltages as high as 4.8 kV. Optical Beam Induced Current (OBIC) measurements have shown that the JTE are efficient. Thyristors with breakover voltage ~3.9 kV have been fabricated. In both case, the performance of the structures are limited by the dielectric rigidity of the ambient environment. Specific component have also been realised. i) current fault limiter have been able to block 800 V ; ii) SiCOI Schottky diodes and MESFET have been processed, which is a first step towards integrated power systems.
Domaines
Energie électrique| Origine | Fichiers produits par l'(les) auteur(s) |
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