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Conference Papers Year : 2024

Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited)

Abstract

The linearity and efficiency of two distinct SiGe HBT devices, manufactured using different process technologies (B55 & B55X intermediate) by STMicroelectronics, are examined with a focus on energy-efficient applications under large-signal conditions.
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Year Month Jours
Avant la publication
Saturday, September 7, 2024
Embargoed file
Saturday, September 7, 2024
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Dates and versions

hal-04603010 , version 1 (06-06-2024)

Identifiers

Cite

Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, et al.. Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited). 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2024, Bangalore, India. pp.1-3, ⟨10.1109/EDTM58488.2024.10511770⟩. ⟨hal-04603010⟩
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