Multipurpose, Fully Integrated 128 $\times$ 128 Event-Driven MD-SiPM With 512 16-Bit TDCs With 45-ps LSB and 20-ns Gating in 40-nm CMOS Technology - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Journal of Solid-State Circuits Année : 2018

Multipurpose, Fully Integrated 128 $\times$ 128 Event-Driven MD-SiPM With 512 16-Bit TDCs With 45-ps LSB and 20-ns Gating in 40-nm CMOS Technology

Résumé

A multipurpose monolithic array of 2 × 2 multichannel digital silicon photomultipliers (MD-SiPMs) fabricated in 40-nm CMOS technology is presented. Each MD-SiPM comprises 64 × 64 smart pixels connected to 128 low-power 45-ps sliding-scale time-to-digital converters (TDCs). The system can operate in two different modes: 1) event-driven and 2) frame-based. The first is suited for positron emission tomography (PET) and the second for synchronous applications like LiDAR. The design includes electronics to capture gamma events by means of a scintillator. The digital readout is fully embedded in the sensor and it is reconfigurable by SPI. Data packets are sent following a simple protocol compatible with an external FIFO, therefore making use of an FPGA optional. Every MD-SiPM can deliver up to 64M time-stamps/s. The sensor can be arranged in any type of configuration through a dedicated synchronization input and can be used to operate jointly with an event generator, such as a pulsed laser, which is useful in many applications. Inherently compatible with 3-D-stacking technology, the sensor can serve as front-end electronics when it is used with a different SPAD silicon tear.

Domaines

Matériaux
Fichier principal
Vignette du fichier
Multipurpose_Fully_Integrated_128_times_128_Event-Driven_MD-SiPM_With_512_16-Bit_TDCs_With_45-ps_LSB_and_20-ns_Gating_in_40-nm_CMOS_Technology-1.pdf (1.39 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04566543 , version 1 (02-05-2024)

Identifiants

Citer

A Carimatto, A Ulku, S Lindner, Eric Gros-Daillon, B Rae, et al.. Multipurpose, Fully Integrated 128 $\times$ 128 Event-Driven MD-SiPM With 512 16-Bit TDCs With 45-ps LSB and 20-ns Gating in 40-nm CMOS Technology. IEEE Journal of Solid-State Circuits, 2018, 1, pp.241 - 244. ⟨10.1109/lssc.2019.2911043⟩. ⟨hal-04566543⟩
0 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More