Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2024

Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy

P. Vigneshwara Raja
Vaidehi Vijay Painter
Raphaël Sommet

Résumé

The variations in the emission time constant and drain current transient (DCT) amplitude of traps in Fe- and C-doped HEMTs are analyzed at different trap-filling biases and pulse widths. Accordingly, the electron capture and emission dynamics of trap at EC – 0.57 eV in the Fe-doped InAlGaN/GaN HEMT are reported. Relatively longer emission time constants (> 100 s at 30 °C) are identified for the trap at EC – 0.33 eV in the C-doped AlN/GaN HEMTs.

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Electronique
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Dates et versions

hal-04519744 , version 1 (25-03-2024)

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  • HAL Id : hal-04519744 , version 1

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P. Vigneshwara Raja, Vaidehi Vijay Painter, Raphaël Sommet, Jean-Christophe Nallatamby. Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy. 8th IEEE Devices Technology and Manufaturing Conference (EDTM 2024), Mar 2024, Bengalore, India. ⟨hal-04519744⟩
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