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Communication Dans Un Congrès Année : 2023

Nonlinear characterization of a GaN power amplifier under antenna impedance mismatch in a mm-wave T/R chip context

Résumé

This paper presents the characterization of a GaN power amplifier (PA) designed for 5G FR2 base station or Satcom links. The characterizations are made in K and Ka bands and include linear and nonlinear measurements. A correlation between design simulations and measurements has been done. The PA has an output power greater than 40 dBm with a PAE of 33% at 26 GHz. As the circuit is intended to be a part of a MIMO architecture due to its target applications, and will be a part of a T/R chip, the behavior of the PA under impedance mismatch, has been investigated with simulation including a SPDT switch influence.
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Dates et versions

hal-04508422 , version 1 (18-03-2024)

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Ahmad Al Hajjar, Lucas Letailleur, Martine Villegas, Ahmed Gasmi, Valentin Deremaux. Nonlinear characterization of a GaN power amplifier under antenna impedance mismatch in a mm-wave T/R chip context. 2023 Asia-Pacific Microwave Conference (APMC), Dec 2023, Taipei, Taiwan. pp.564-566, ⟨10.1109/APMC57107.2023.10439874⟩. ⟨hal-04508422⟩
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