Nonlinear characterization of a GaN power amplifier under antenna impedance mismatch in a mm-wave T/R chip context
Résumé
This paper presents the characterization of a GaN power amplifier (PA) designed for 5G FR2 base station or Satcom links. The characterizations are made in K and Ka bands and include linear and nonlinear measurements. A correlation between design simulations and measurements has been done. The PA has an output power greater than 40 dBm with a PAE of 33% at 26 GHz. As the circuit is intended to be a part of a MIMO architecture due to its target applications, and will be a part of a T/R chip, the behavior of the PA under impedance mismatch, has been investigated with simulation including a SPDT switch influence.