Charge carrier profiling with MIR and THz s-SNOM - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Charge carrier profiling with MIR and THz s-SNOM

Benjamin Walter
  • Fonction : Auteur

Résumé

In the past years, it has been shown that s-SNOM (scattering-type scanning near-field optical microscopy) is a powerful technique to probe different light-matter interactions. Among them, charge carriers present different optical responses in the mid-infrared (MIR) and terahertz (THz) regions. Here we show that THz s-SNOM is highly sensitive to small changes in charge carrier concentration in a semiconductor, with spatial resolution at the nanometer scale.
Fichier principal
Vignette du fichier
CNSantos_Semiconductor_template-IRMMW-THz2023_v3.pdf (261.1 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04505239 , version 1 (16-03-2024)

Identifiants

Citer

Cristiane Santos, Édouard Lebouvier, Benjamin Walter, Sophie Eliet, Nicolas Chevalier, et al.. Charge carrier profiling with MIR and THz s-SNOM. 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/IRMMW-THz57677.2023.10298850⟩. ⟨hal-04505239⟩
0 Consultations
3 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More