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Communication Dans Un Congrès Année : 2018

[Invited] Selective area growth of III-V semiconductors using atomic hydrogen during Molecular Beam epiptaxy

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hal-04486283 , version 1 (01-03-2024)

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  • HAL Id : hal-04486283 , version 1

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Wallart X., Bucamp A., Fahed M., Troadec D., Patriarche G., et al.. [Invited] Selective area growth of III-V semiconductors using atomic hydrogen during Molecular Beam epiptaxy. 7th International Conference on Nanostructures and Nanomaterials Self-Assembly, NanoSEA 2018, Jul 2018, Carqueiranne (France), France. ⟨hal-04486283⟩
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