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Communication Dans Un Congrès Année : 2022

Experimental three-dimensional thermal mapping of a GaN on RF-SOI chip

Résumé

We present a novel method to determine the three-dimensional (3D) temperature field of a radio frequency (RF) chip based on a 3D heterogeneous integration of GaN HEMT and RF-SOI technologies combining the advantages of both. It is composed of a stack of multiple layers of different materials on top of a SOI substrate. A RF GaN transistor is located at the top of the stack and acts as a heat source. We use several resistance temperature detectors (RTDs) embedded at different key locations in the stack coupled to an infrared (IR) thermography. When combined to a 3D numerical model, such methodology enables us to extract the necessary information in order to retrieve the temperature 3D distribution in the whole sample.
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Dates et versions

hal-04476925 , version 1 (25-02-2024)

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Isaac Haik Dunn, Elyes Nefzaoui, Jerome Loraine, Imene Lahbib, Georges Hamaoui, et al.. Experimental three-dimensional thermal mapping of a GaN on RF-SOI chip. 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2022, Dublin, France. ⟨10.1109/THERMINIC57263.2022.9950649⟩. ⟨hal-04476925⟩
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