Design of three-level flying-capacitor commutation cells with four paralleled 650V/60A GaN HEMTs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Design of three-level flying-capacitor commutation cells with four paralleled 650V/60A GaN HEMTs

Résumé

This paper presents two improved solutions (Vertical and Horizontal commutation cells) for three-level flying capacitor (FC) topologies with four 650 V/ 60 A (25 mΩ) GS66516T GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) in parallel per switch intended to be used in a 540 V / 70 kVA power drive system. Both solutions were built and experimentally tested, as a buck converter, regarding switching speed (15.14 kV / µs max) and overvoltage (6 % max) for different current levels (7 A to 53 A).
Fichier principal
Vignette du fichier
APEC_Article_V1-1_FC.pdf (1.14 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04461531 , version 1 (16-02-2024)

Identifiants

Citer

Hans Hoffmann Sathler, Tianyu Zhao, François Costa, Bernardo Cougo, Gilles Segond, et al.. Design of three-level flying-capacitor commutation cells with four paralleled 650V/60A GaN HEMTs. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Jun 2021, Phoenix, France. pp.2277-2284, ⟨10.1109/APEC42165.2021.9487160⟩. ⟨hal-04461531⟩
29 Consultations
6 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More