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Communication Dans Un Congrès Année : 2013

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Résumé

In this paper we highlight our latest results on high voltage SiC thyristors comprising an etched JTE. Compared to our previous design concepts, the thyristors described here are larger in size and have been investigated regarding pulsed power applications. Quasi-static on-state characteristics show that the devices withstand a repetitive current load of up to 16 A corresponding to a current density of 825 A/cm2. Their switching behavior was evaluated up to 1000 V demonstrating characteristic waveforms at turn-on and gate turn-off. Moreover, pulsed current characteristics show that the typical device under test sustained a current pulse of 20 μs with a peak value of 200 A and 10 kA/cm2, respectively.
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Dates et versions

hal-04423357 , version 1 (29-01-2024)

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Sigo Scharnholz, Ralf Hassdorf, Gontran Pâques, Bertrand Vergne, Dominique Planson. Pulse Current Characterization of SiC GTO Thyristors with Etched JTE. European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩. ⟨hal-04423357⟩
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