Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique
Résumé
The SiC bipolar rectifier is a good alternative compared to the SiC Junction Barrier Schottky diode for applications requiring very high current capability for breakdown voltage higher than 3 kV. This paper reports on the influence of temperature on the electrical carrier lifetime of 3.3 kV 4H-SiC PiN diodes processed with a new generation of SiC material.
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