Advanced measurement techniques for GaN-based HEMTs: Trap investigation and innovative linearity characterization - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Advanced measurement techniques for GaN-based HEMTs: Trap investigation and innovative linearity characterization

Florent Gaillard
  • Fonction : Auteur
  • PersonId : 1116992
P. Vigneshwara Raja
Michel Prigent
Raphaël Sommet
Fichier non déposé

Dates et versions

hal-04351536 , version 1 (18-12-2023)

Identifiants

  • HAL Id : hal-04351536 , version 1

Citer

Jose Anderson Silva dos Santos, Florent Gaillard, P. Vigneshwara Raja, Michel Prigent, Raphaël Sommet, et al.. Advanced measurement techniques for GaN-based HEMTs: Trap investigation and innovative linearity characterization. XXII International Workshop on Physics of Semiconductor Devices, IIT Madras, Dec 2023, Chennai (India), France. ⟨hal-04351536⟩
4 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More