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Communication Dans Un Congrès Année : 2010

Graded Etched Junction Termination for SiC Thyristors

Résumé

In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².
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hal-04347104 , version 1 (15-12-2023)

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  • HAL Id : hal-04347104 , version 1

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Gontran Pâques, Nicolas Dheilly, Dominique Planson, Rik W. de Doncker, Sigo Scharnholz. Graded Etched Junction Termination for SiC Thyristors. European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway. ⟨hal-04347104⟩
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