High Mobility InAs/GaSb Quantum Well and in-Plane Core-Shell Nanostructures Grown on Highly Mismatched Substrates - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

High Mobility InAs/GaSb Quantum Well and in-Plane Core-Shell Nanostructures Grown on Highly Mismatched Substrates

Résumé

We present the growth of InAs based heterostructures by molecular beam epitaxy on highly mismatched GaAs and InP substrates. We particularly investigate the protection of the InAs channel both with respect to the interface dislocation network arising at the mismatched interface using a GaSb accommodation layer and with respect to the surface defects with a GaSb shell. Hall effect and 4-probe scanning tunnelling microscopy are correlated to evidence the impact of these passivating layers on the electron transport properties inside in-plane InAs nanowires.
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Dates et versions

hal-04334320 , version 1 (10-12-2023)

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  • HAL Id : hal-04334320 , version 1

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Wijden Khelifi, Christophe Coinon, Maxime Berthe, David Troadec, Gilles Patriarche, et al.. High Mobility InAs/GaSb Quantum Well and in-Plane Core-Shell Nanostructures Grown on Highly Mismatched Substrates. ICMBE, Sep 2022, Scheffield, United Kingdom. ⟨hal-04334320⟩
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