High Mobility InAs/GaSb Quantum Well and in-Plane Core-Shell Nanostructures Grown on Highly Mismatched Substrates
Résumé
We present the growth of InAs based heterostructures by molecular beam epitaxy on highly mismatched GaAs and InP substrates. We particularly investigate the protection of the InAs channel both with respect to the interface dislocation network arising at the mismatched interface using a GaSb accommodation layer and with respect to the surface defects with a GaSb shell. Hall effect and 4-probe scanning tunnelling microscopy are correlated to evidence the impact of these passivating layers on the electron transport properties inside in-plane InAs nanowires.