Impact of nanoscale faceting on the electrical properties of in-plane InGaAs/Ga(As)Sb tunnel junctions grown by selective area MBE - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Impact of nanoscale faceting on the electrical properties of in-plane InGaAs/Ga(As)Sb tunnel junctions grown by selective area MBE

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hal-04332199 , version 1 (08-12-2023)

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  • HAL Id : hal-04332199 , version 1

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Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, et al.. Impact of nanoscale faceting on the electrical properties of in-plane InGaAs/Ga(As)Sb tunnel junctions grown by selective area MBE. 21 st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain, Apr 2023, Madrid, Spain. ⟨hal-04332199⟩
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