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Communication Dans Un Congrès Année : 2022

InSb thin films and selective area MBE grown nanostructures on InP(111)B substrate

Résumé

The growth of InSb by molecular beam epitaxy on InP(111) substrate is investigated. We observe that a very large Sb/In flux ratio promotes the spreading of InSb, leading a rapid coalescence of initial 2D InSb islands and forming a smooth InSb layer after 100nm deposition. This growth mode is used to produce in-plane InSb nanowire networks by selective area epitaxy with a very good yield.
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Dates et versions

hal-04332162 , version 1 (08-12-2023)

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  • HAL Id : hal-04332162 , version 1

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Wijden Khelifi, Pierre Capiod, Christophe Coinon, Maxime Berthe, X. Wallart, et al.. InSb thin films and selective area MBE grown nanostructures on InP(111)B substrate. International Conference on Molecular Beam Epitaxy (ICMBE) 2022, Sep 2022, Sheffield - UK, France. ⟨hal-04332162⟩
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