InSb thin films and selective area MBE grown nanostructures on InP(111)B substrate
Résumé
The growth of InSb by molecular beam epitaxy on InP(111) substrate is investigated. We observe that a very large Sb/In flux ratio promotes the spreading of InSb, leading a rapid coalescence of initial 2D InSb islands and forming a smooth InSb layer after 100nm deposition. This growth mode is used to produce in-plane InSb nanowire networks by selective area epitaxy with a very good yield.