Periodic Arrays of Dopants in Silicon by Ultralow Energy Implantation of Phosphorus Ions through a Block Copolymer Thin Film - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ACS Applied Materials and Interfaces Année : 2023

Periodic Arrays of Dopants in Silicon by Ultralow Energy Implantation of Phosphorus Ions through a Block Copolymer Thin Film

Stefano Kuschlan
Riccardo Chiarcos
  • Fonction : Auteur
Michele Laus
  • Fonction : Auteur
Francesc Pérez-Murano
  • Fonction : Auteur
Jordi Llobet
  • Fonction : Auteur
Marta Fernandez-Regulez
  • Fonction : Auteur
Michele Perego
Gabriele Seguini
Marco de Michielis
  • Fonction : Auteur
Graziella Tallarida

Résumé

In this work, block copolymer lithography and ultralow energy ion implantation are combined to obtain nanovolumes with high concentrations of phosphorus atoms periodically disposed over a macroscopic area in a p-type silicon substrate. The high dose of implanted dopants grants a local amorphization of the silicon substrate. In this condition, phosphorus is activated by solid phase epitaxial regrowth (SPER) of the implanted region with a relatively low temperature thermal treatment preventing diffusion of phosphorus atoms and preserving their spatial localization. Surface morphology of the sample (AFM, SEM), crystallinity of the silicon substrate (UV Raman), and position of the phosphorus atoms (STEM- EDX, ToF-SIMS) are monitored during the process. Electrostatic potential (KPFM) and the conductivity (C-AFM) maps of the sample surface upon dopant activation are compatible with simulated I−V characteristics, suggesting the presence of an array of not ideal but working p−n nanojunctions. The proposed approach paves the way for further investigations on the possibility to modulate the dopant distribution within a silicon substrate at the nanoscale by changing the characteristic dimension of the self-assembled BCP film.
Fichier principal
Vignette du fichier
draft_Proof_hi.pdf (1.77 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04258424 , version 1 (26-10-2023)

Identifiants

Citer

Stefano Kuschlan, Riccardo Chiarcos, Michele Laus, Francesc Pérez-Murano, Jordi Llobet, et al.. Periodic Arrays of Dopants in Silicon by Ultralow Energy Implantation of Phosphorus Ions through a Block Copolymer Thin Film. ACS Applied Materials and Interfaces, 2023, ⟨10.1021/acsami.3c03782⟩. ⟨hal-04258424⟩
6 Consultations
14 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More