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Communication Dans Un Congrès Année : 2009

From photons to electrons: a complete 3D simulation flow for CMOS image sensor

Résumé

This paper presents the 3-Dimensional simulation flow we have developed at STMicroelectronics for CMOS Image Sensor modeling. In this purpose, we coupled Optical simulations with TCAD process and device simulations to combine both approaches benefits. After describing the electromagnetic simulation of the light propagation inside the pixel structure and the framework for the simulation of the photo-generated electrons collection by the photodiodes, a comparison is made between our coupled Optical/TCAD simulations results and real Image Sensors optical measurements. The accuracy and predictability of this methodology is demonstrated on various 1.75µm pitch pixels.
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Dates et versions

hal-04235628 , version 1 (10-10-2023)

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  • HAL Id : hal-04235628 , version 1

Citer

Crocherie Axel, Boulenc Pierre, Jérôme Vaillant, Hirigoyen Flavien, Hérault Didier, et al.. From photons to electrons: a complete 3D simulation flow for CMOS image sensor. IISW 2009 - IEEE 2009 International Image Sensor Workshop, IEEE, Jun 2009, Bergen, Norway. pp.P15. ⟨hal-04235628⟩
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