Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award] - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]

Mustafa Shqair
Emmanuel Sarraute
Frédéric Richardeau

Résumé

For the first time, a complete 2D transient multiphysics electro-thermo-mechanical and metallurgical model of a 1.2kV-80mOhm gate-planar SiC MOSFET power chip has been developed in a single FEM software. This model is used to quantify the short-circuit critical time and energy density with respect to the local SiO2 interlayer strength at high temperatures and the Al source-metal solidus-liquidus phase transition temperature. Repetitive experimental short-circuits were conducted to confirm the gate-aging existence in coherence with the critical values extracted from the proposed model. 1st Prize Winner - Best Paper Awards ESREF'23.
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hal-04233908 , version 1 (09-10-2023)

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Mustafa Shqair, Emmanuel Sarraute, Thibauld Cazimajou, Frédéric Richardeau. Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'23, Université Toulouse 3 Paul Sabatier, Université de Bordeaux, IMS, LAAS-CNRS, CNES, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115081⟩. ⟨hal-04233908⟩
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