Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Résumé

This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P$^+$ rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure
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Dates et versions

hal-04218429 , version 1 (26-09-2023)

Identifiants

  • HAL Id : hal-04218429 , version 1

Citer

Dominique Planson, D. Tournier, Pascal Bevilacqua, Camille Sonneville, Pierre Brosselard, et al.. Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy. ⟨hal-04218429⟩
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