[Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications - Archive ouverte HAL Accéder directement au contenu
Autre Publication Scientifique Année : 2023

[Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications

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hal-04218271 , version 1 (26-09-2023)

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Farid Medjdoub. [Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications. Workshop on Electrical and thermal characterization of HEMT, Jointly Organized by IEEE EDS Delhi Chapter (New Delhi, India), september 26, 2023. ⟨hal-04218271⟩
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