[Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications - Archive ouverte HAL
Autre Publication Scientifique Année : 2023

[Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications

Domaines

Physique [physics] Sciences de l'ingénieur [physics]

Collection IEMN  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-04218271

Soumis le : mardi 26 septembre 2023-14:45:44

Dernière modification le : mardi 4 juin 2024-13:26:03

Fichier non déposé

Dates et versions

hal-04218271 , version 1 (26-09-2023)

Identifiants

  • HAL Id : hal-04218271 , version 1

Citer

Farid Medjdoub. [Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications. Workshop on Electrical and thermal characterization of HEMT, Jointly Organized by IEEE EDS Delhi Chapter (New Delhi, India), september 26, 2023. ⟨hal-04218271⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS UNIV-VALENCIENNES IEMN UNIV-LILLE RENATECH
18 Consultations
0 Téléchargements

Partager

More