The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified by deep-level transient Fourier spectroscopy (DLTFS). The junction termination extension (JTE) and floating JTE rings (periphery protections) are realized using the Al + ion-implantation process in the PiN diode structure, to mitigate the electric field crowding at the junction edges and obtain the theoretically projected off-state performance. The 4H-SiC PiN diode exhibits forward voltage drop of ~2.6 V at 1 mA, ideality factor of ~1.6, series resistance of ~1.2 Ω, low reverse leakage current < 0.5 nA at 200 V, blocking voltage > 200 V, built-in barrier potential of ~2.1V, and effective doping concentration for the drift layer of ~7.9×10 14 cm-3. The temperature-induced changes in the forward I-V characteristics are investigated from 25 °C to 150 °C. From the DLTFS results, three hole traps H1 at EV + 0.16eV, H2 at EV + 0.3 eV, and H3 at EV + 0.63 eV, and two electron traps E1 at EC-0.19 eV and E2 at EC-0.67 eV are identified in the 4H-SiC PiN diodes. The current-mode DLTFS (I-DLTFS) and thermally stimulated capacitance (TSCAP) spectroscopy measurements are also carried out to acquire further information about the traps in the 4H-SiC PiN diodes.