Nanostructuring of 4H-SiC by high temperature annealing - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2022

Nanostructuring of 4H-SiC by high temperature annealing

Nanostructuration du 4H-SiC par recuit haute température

Résumé

Nanostructuring of the surface occurs after annealing at high temperature of 4H-SiC samples. The surface morphology becomes needle-shaped like black silicon. The roughness of the surface also increases due to annealing and a slight etching of nanostructured zones occurs with an accentuated phenomenon at the boundaries. Electroluminescence is obtained by applying forward bias on fabricated PIN diode structures with localized nanostructured windows on the surface. Light intensity seems to be more sensitive to the initial orientation of the substrate and less to the annealing temperature in the 1500°C-1700°C range.
Fichier principal
Vignette du fichier
nanostructuration_poster.pdf (701.98 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Licence : CC BY - Paternité

Dates et versions

hal-04171193 , version 1 (26-07-2023)

Licence

Paternité

Identifiants

  • HAL Id : hal-04171193 , version 1

Citer

Enora Marion Vuillermet, Elise Usureau, Mihai Lazar, Regis Deturche. Nanostructuring of 4H-SiC by high temperature annealing. 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. . ⟨hal-04171193⟩
12 Consultations
10 Téléchargements

Partager

Gmail Facebook X LinkedIn More