A new Method for Designing Robust Low Noise Amplifier
Nouvelle méthode de conception d'amplificateur faible bruit robuste
Résumé
In this paper, we introduce a novel approach for the design of robust low-noise amplifiers (LNAs) using wide-bandgap GaN MMIC technology. The objective of this work is to compare two robust LNA design strategies. While a method already mentioned in the literature reaches high linearity performance levels by making use of highly sized device at the price of noise figure (NF) degradation, this work proposes an alternative design option which allows to switch in a reversive way from optimum NF performance to optimum power compression point, by suitably changing the quiescent point of the transistor. This second strategy of design implies beforehand an adequate selection of the transistor's sizing taking into account its capacity to be matched at its input and at its output whatever the biasing condition. Thus, a comparison is performed for the two different LNA design strategies, results are presented and discussed. It is proven that the proposed reconfigurable LNA achieves the best NF results under nominal biasing conditions, while it can be DCvoltage tuned to improve its linearity close to that of the highly sized transistor LNA: this operating mode allows the receiver to operate under electromagnetic aggression conditions. The new proposed LNA achieves an average noise figure of 1.05 dB for a small signal gain higher than 10 dB over the X-Band, and with an input compression point (IP1dB) that can increase by 10 dB between the two quiescent point, up to IP1dB of 14 dBm (IP1dB of 19 dBm is achieved for the nontunable design, with a NF 0.2 dB higher than our design).
Origine : Fichiers produits par l'(les) auteur(s)
Licence : CC BY - Paternité
Licence : CC BY - Paternité